Efeitos de dopantes protrusivos nas propriedades de transmissão de hetero-estruturas GaAs/AliGa1-xAs

Abstract

The effects of localized impurities on the transmission properties of electrons in heterojunctions and single/ double barriers with abrupt and non-abrupt interfaces are investigated. The impurities are described by gaussian wells whose widths ( ~ 20 Á) were estimated with tunneling microscopy, and whose depths determines a ground state that is the sarne as those calculated considering hidrogenoid impurities. The non-abrupt interfaces description follows the previously proposed scheme of Freire, Auto, and Farias. The numerical solution of the Schrodinger equations with position dependent effective mass shows that the inelastic scattering with a impurity can strongly modify the electron transmission properties in the heterostructures, being in certain cases more important than the effects of non-abrupt interfaces. It is shows not only that protrusion dopants can produce transmission resonances in the case of heterojunctions, but that changes on the transmission properties of single/ double barriers are strongly dependent on the localization and density of the impurities.