Efeitos do estanho no desempenho dos fotoanodos de ZnO para CSSC

Abstract

Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density.