Estudo das propriedades dielétricas em função da temperatura da cerâmica binbo4 com adição de 10% de CuO

Abstract

The Bismuth Niobate (BiNbO4) or BNO, has been explored as a dielectric material with great potential for LTCCs (Low temperature co-fired ceramic) multilayer. The LTCCs are microelectronic devices that have as their point differential synthesis, and the structural support along with their sintered ceramic resistive components, conductors and dielectrics less than 1000 ºC and monolithically. In order to improve the dielectric properties of the material, seek to increasingly densifies it, using among other techniques adding fluxes. The objective of this paper is to present a study of the dielectric properties as a function of temperature ceramic BiNbO4 with addition of 10% CuO mass. The BiNbO4 was prepared by conventional ceramic method. The starting oxides were ground for 2 hours in a high energy mill planetary were calcined at 850 ° C for 3h and characterized by X-ray diffraction. The result of X-ray diffractogram of the pure BNO was refined using the Rietveld method, which confirmed obtaining orthorhombic phase alpha-BNO. For dielectric analysis, samples were produced with BNO pure calcined and also with BNO with addition of 10% by weight of CuO. The samples were sintered at 925 ° C and arranged in an impedance analyzer in order to study the dielectric properties as a function of temperature in a range from 40º C to 220º C. The BNO pure showed permissiveness about 27 for all temperatures and a loss tangent of 3,59X10-3 à 7,38X10-3. The sample BNO with addition of 10% CuO had a significant increase in their permittivity ranging from 82.3 to 175.9 and a loss tangent of 5.16 x10-1 to 3.18 in the temperature range studied.