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dc.contributor.authorMatias, João Guilherme Nogueira-
dc.date.accessioned2019-10-08T16:29:30Z-
dc.date.available2019-10-08T16:29:30Z-
dc.date.issued1999-
dc.identifier.citationMATIAS, J. G. N.pt_BR
dc.identifier.urihttp://www.repositorio.ufc.br/handle/riufc/46613-
dc.descriptionMATIAS, J. G. N. Microstructural and electrical properties of sintered tungsten trioxide. 1999. Artigo (Journal of materials science), 1999.pt_BR
dc.description.abstractTungsten trioxide sintered wafers were prepared from WO3 powder obtained when ammonium paratungstate is decomposed in air at moderate temperature. Two wafer series of five samples were sintered under the same conditions in the temperature range 600–1000 C. One of these wafers series was submitted to a subsequent annealing at 700 C under a hydrogen atmosphere. All samples were characterized at room temperature by X-ray diffraction and electrical measurements. X-ray spectra show that WO3 ceramic presents a mixture of the triclinic and monoclinic phases before the reduction process. After the reduction process, WO2 and four hydrogen tungsten bronze phases are present in wafers. Capacitance measurements showed that the samples submitted only to the sintering process changed the dielectric constant with the frequency according to the Debye model. The reduced WO3 shows a semiconductor behavior, as determined by electrical resistivity measurements.pt_BR
dc.language.isoenpt_BR
dc.publisherJournal of materials sciencept_BR
dc.rightsAcesso Abertopt_BR
dc.subjectDielectric constantpt_BR
dc.subjectElectrical resistivitypt_BR
dc.subjectReduction processpt_BR
dc.subjectCapacitance measurementpt_BR
dc.subjectMonoclinic phasespt_BR
dc.titleMicrostructural and electrical properties of sintered tungsten trioxidept_BR
dc.typeArtigo de Periódicopt_BR
dc.title.enMicrostructural and electrical properties of sintered tungsten trioxidept_BR
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